2sb1142 / 2sd1682 no.2060-1/5 applications ? power supplies, relay drivers, lamp drivers. features ? adoption of fbet and mbit processes. ? low saturation voltage. ? large current capacity and wide aso. specifications ( ) : 2sb1142 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2.5 a collector current (pulse) i cp (--)5.0 a collector dissipation p c 1.5 w tc=25 c10w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)50v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na h fe 1v ce =(--)2v, i c =(--)100ma (100)* (400)* dc current gain 100* 560* h fe 2v ce =(--)2v, i c =(--)2a 35 continued on next page. * : the 2sb1142 / 2sd1682 are classified by 100ma h fe as follows : rank r s t u 2sb1142 h fe 100 to 200 140 to 280 200 to 400 2sd1682 h fe 100 to 200 140 to 280 200 to 400 280 to 560 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en2060b o1806ea im tc-00000203 / o2303tn(koto) / 92098ha(kt) / d151mh,(koto) any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sb1142 / 2sd1682 pnp / npn epitaxial planar silicon transistors 50v / 2.5a high-speed switching applications
2sb1142 / 2sd1682 no.2060-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 140 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma (--250)110 (--500)300 mv base-to-emitterr saturation voltage v be (sat) i c =(--)1a, i b =(--)50ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0a (--)6 v turn-on time t on see specified test circuit. (35)35 ns storage time t stg see specified test circuit. (350)550 ns fall time t f see specified test circuit. (30)30 ns package dimensions switching time test circuit unit : mm (typ) 7516-002 123 8.0 1.6 0.8 0.7 2.4 4.8 0.75 4.0 11.0 15.5 7.5 3.0 1.5 1.7 1.0 1.4 1.0 3. 6 3.3 0.8 3.0 1 : emitter 2 : collector 3 : base sanyo : to-126ml i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --2.0 --1.6 --1.2 --0.8 --0.4 2sb1142 2sd1682 i b =0ma 8ma 10ma 20ma 18ma 16ma 14ma 12ma 2ma 4ma 6ma itr09032 0 0 --2.0 --1.6 --0.4 --0.8 --1.2 --20ma --25ma --30ma --10ma --15ma --2ma --3ma --1ma --5ma i b =0ma itr09031 2.0 1.6 1.2 0.8 0.4 0 0 0.8 2.0 0.4 1.2 1.6 v r r b v cc =25v v be = --5v + + 50 w input output 100 m f 470 f pw=20 m s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a for pnp, the polarity is reversed.
2sb1142 / 2sd1682 no.2060-3/5 h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v f t -- i c gain-bandwidth product, f t -- mhz i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe ta=75 c --25 c 25 c ta=75 c --25 c 25 c itr09037 100 1000 5 7 3 2 10 5 7 3 2 100 1000 5 7 5 7 3 2 10 3 2 0.01 0.1 1.0 --1.0 --0.1 3 257 3 23 2 55 7 7 3 257 3 25 3 25 7 7 --0.01 itr09038 2sb1142 v ce = --2v 2sd1682 v ce =2v 3 3 2 7 5 7 5 100 10 37 2 1.0 10 537 25 7 itr09040 2sb1142 / 2sd1682 f=1mhz 0.1 1.0 3 25 773 23 2 57 0.01 2sb1142 / 2sd1682 v ce =10v 2sb1142 2sd1682 for pnp, minus sign is omitted. 100 5 3 3 2 2 7 5 10 itr09039 2sb1142 v ce = --2v ta=75 c --25 c 25 c ta=75 c --25 c 25 c --2.8 --2.0 --2.4 --1.2 --0.8 --1.6 --0.4 0 2.8 0.4 1.2 0.8 2.4 2.0 1.6 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 itr09035 2sd1682 v ce =2v 0 0.2 0.4 0.6 0.8 1.2 1.0 itr09036 2sb1142 2sd1682 --2.0 --1.6 --1.2 --0.8 --0.4 2sb1142 2sd1682 i b =0ma 8ma 9ma 7ma 10ma 2ma 1ma 4ma 3ma 6ma 5ma itr09034 0 0 --20 --16 --4 --8 --12 --10ma --12ma --2ma --6ma --8ma --4ma i b =0 ma itr09033 2.0 1.6 1.2 0.8 0.4 0 08 20 41216 for pnp, minus sign is omitted.
2sb1142 / 2sd1682 no.2060-4/5 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c collector dissipation, p c -- w v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv 0 2.0 1.5 1.0 0.5 20 060 40 80 100 140 120 160 it11602 no heat sink 2sb1142 / 2sd1682 0 12 10 8 6 4 2 20 060 40 80 100 140 120 160 it11603 ideal radiation 2sb1142 / 2sd1682 10ms 1.0 5 7 2 3 10 5 7 2 3 5 7 2 3 0.1 10 1.0 25 37 100 25 37 57 dc operation ta=25 c dc operation tc=25 c i cp =5a 1ms i c =2.5a itr09045 2sb1142 / 2sd1682 --0.01 --0.1 235 77235235 7 --1.0 0.01 0.1 2 77 35 2 7 323 55 1.0 --1.0 --10 5 7 3 5 7 3 2 2 1.0 10 7 5 3 7 5 3 2 2 itr09043 itr09044 ta= --25 c 25 c 2sb1142 i c / i b =20 2sd1682 i c / i b =20 75 c ta= --25 c 25 c 75 c 100ms --0.1 --0.01 23 57 23 5 23 5 7 7 --1.0 --1000 5 3 2 5 3 2 7 5 3 2 7 --100 --10 itr09041 itr09042 0.01 0.1 7 2357 235 235 7 1.0 1000 3 5 5 2 3 7 2 5 3 7 2 100 10 ta=75 c --25 c 25 c ta=75 c --25 c 2sb1142 i c / i b =20 2sd1682 i c / i b =20 25 c ta=25 c single pulse for pnp, minus sign is omitted.
2sb1142 / 2sd1682 no.2060-5/5 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2006. specifications and information herein are subject to change without notice. ps
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